Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage (Vds) : 100V
Continuous Drain Current (Id): 180A
Drain-Source Resistance (Rds On): 4.5Ohms
Gate-Source Voltage (Vgs): 20V
Gate Charge (Qg): 210 nC
Operating Temperature Range: -55 – 175°C
Power Dissipation (Pd): 370W
Package Include:
1 x IRFB4110 MOSFET N-CH Si 100V 180A